Tutorials

Tutorials will be held on Sunday December 18, 2011. The charges for tutorials are Rs. 1,000 only. To participate, you need to sign-up for the tutorial while registering online by December 09, 2011. The following tutorials will be held:

Download Tutorial Registration Form


High Power Semiconductor Devices
Full day (9:30AM to 6:00PM)
Dr. Ritu Sodhi, Fairchild Semiconductor (India) Pvt. Ltd., Pune, Maharashtra
Dr. Praveen Shenoy, Founder & Consultant at Power Device Technology, Cochin, INDIA
Dr. Philip Mawby, University of Warwick, UK
Dr. Shankar Madathil, Sheffield University, UK

This short tutorial course on High Power Semiconductor Devices is designed to give an insight about the design, operation and applications of high power, high frequency semiconductor devices. The scope of the course is outlined below. There will be four sessions – each focused on a different aspect of this field of power devices – low and mid voltage MOSFETs, high voltage MOSFETs and IGBTs, Silicon Carbide devices for high voltage applications and Gallium Nitride devices for high voltage and high frequency applications. Each session will introduce to the participants the basic structure and operation of the devices being reviewed, the key figures of merit used to evaluate / compare these devices, details of the applications where they are used, the processing challenges faced by researchers today and the technology trends going forward. The instructors will cover both the theoretical aspects of device design and development, and the practical aspects of how and where these devices are likely to be used and how the applications drive the developments in devices and processes. This will provide comprehensive information about all the key aspects of high power devices to researchers interested in this field, and will give them a good base to start with. The field of power devices is still not sufficiently studied or captured in Indian universities and other research institutions. It’ll be a unique and great opportunity for those interested in this area to hear it from some of the experts in this area. The pre-requisites for this tutorial short course is a basic understanding of the physics of semiconductor devices. Full details
Multiscale Modeling of Nanomaterials
Full day (9:30AM to 6:00PM)
Dr. Vinod Tewary, National Institute of Standards and Technology, Boulder, USA
Dr. Ranjit Pati , Michigan Technological University, Houghton, USA

This short tutorial course is designed to provide an introduction to multiscale modeling techniques for modern nanomaterials. The range and scope of the course will be apparent from the list of contents given below. We will also try to provide illustrative examples for hands-on experience during the tutorial. In Part A, we will provide and demonstrate some simple codes in ForTran and MathCad and their applications to graphene and other nanomaterials. For Part B, we will try to log on to MTU computer in USA and run a DFT code for a simple modeling problem. The course should be of interest to theory as well as experimental researchers, who want to familiarize themselves with the basics of multiscale modeling. It will prepare the theorists for learning more advanced techniques by further self-study. For experimental researchers, the course should also be useful because it will make them aware of the strength and limitations of multiscale modeling and its applicability to research problems. The necessary prerequisite for the course is graduate (M.Sc.) level knowledge of Solid State Physics, Quantum Mechanics, and Mathematical Physics. Full details
Organic Solar Cells: Physics and Current Research Trends
Full day (9:30AM to 6:00PM)
Dr. Y. N. Mohapatra, Dept. of Physics, IIT Kanpur, India
Dr. S.S.K. Iyer, Dept. of EE, IIT Kanpur, India
Dr. B. Mazhari, Dept. of EE, IIT Kanpur, India

The field of Organic thin-film photovoltaic devices (OPV) is rapidly evolving due to their several potential advantages including low cost processing over large area flexible substrates and availability of wide range of materials with tunable optoelectronic properties. Since the demonstration of near 1% solar cell in 1986, considerable effort has been devoted to improvement of power conversion efficiency and values in excess of 8% have recently been reported. The aim of this course is to introduce the participants to the fields of organic semiconductors and photovoltaics. The course includes an overview of organic semiconductor physics, fundamentals of organic solar cells, discussion on distinctive properties of organic solar cells and challenges for commercialization. The course requires only a general background in semiconductor device physics and should be of interest to all those who wish to work in the field of organic semiconductors. Full details
Basics of CMOS Device Technology and Optical Lithography
Half day (2:30PM to 6:00PM)
Dr. Abhisek Dixit, IBM, Bengaluru, India
Dr. Samit Barai, IBM, Bengaluru, India

In this tutorial, we will cover basics of MOSFET device design, highlighting the process contribution to making an advanced MOSFET. Challenges faced in device scaling at 32-nm node and beyond will be discussed, followed by the recent advances in MOSFET architectures such as the double gate and FinFETs. In order to realize these devices on Silicon, optical lithography is used to print designs much beyond the classical resolution limit of the imaging system. The resolution enhancement techniques are essentially computational in nature encompassing optical imaging, optimization theory and efficient computation. In this tutorial, the basics of lithography imaging theory and efficient numerical formulations for image calculations will be presented. The optimization techniques that are used to device predictive resist development models will also be discussed. Finally we will describe some of the promising resolution enhancement techniques for 22 nm and 14 nm technology development. Full details