• EE698P (Memory Technology and Neuromorphic Computing)

• EE370 tutorial (Digital Electronics)

• EE210 tutorial (Microelectronics - I)

• EE201 tutorial (Introduction to Electronics)

• Book: Shubham Sahay and M. Jagadesh Kumar, Junctionless Field Effect Transistors: Design, Modelling and Simulation, Wiley-IEEE press, NJ, USA, ISBN: 978-1-119-52353-6,496 pages, Feb, 2019.

• Shubham Sahay and M. Jagadesh Kumar, Physical Insights into the Nature of Gate Induced Drain Leakage in Ultra-Short Channel Nanowire Field Effect Transistors, IEEE Transactions on Electron Devices, vol. 64, no. 6, pp. 2604-2610, June 2017.(Appeared in the list of most popular papers in the month of April, July, August and September 2017 and January, February, April (amongst top 10), May (amongst top 10), June (amongst top 3) and July 2018)

• Shubham Sahay and M. Jagadesh Kumar, Diameter Dependency of Leakage Current in Nanowire Junctionless Field Effect Transistors, IEEE Transactions on Electron Devices, vol. 64, no. 3, pp. 1330-1335, Mar. 2017. (Appeared in the list of most popular papers in the month of January, February and April 2017)

• Shubham Sahay, and Dmitri Strukov, A Behavioral Compact Model for Static Characteristics of 3D NAND Flash Memory, IEEE Electron Device Letters, vol. 40, no. 4, pp. 558-561, April 2019.

• Shubham Sahay, M. Klachko, and Dmitri Strukov, Hardware Security Primitive Exploiting Intrinsic Variability in Analog Behavior of 3-D NAND Flash Memory Array, IEEE Transactions on Electron Devices, vol. 66, no. 5, pp. 2158-2164, May 2019.

• Shubham Sahay, M. Bavandpour, M. R. Mahmoodi and Dmitri Strukov, Energy-Efficient Moderate Precision Time-Domain Mixed-Signal Vector-by-Matrix Multiplier Exploiting 1T-1R Array, IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, vol. 6, no. 1, pp. 18-26, June 2020 .

• Shubham Sahay, M. Bavandpour, M. R. Mahmoodi and Dmitri Strukov, A 2T-1R Cell Array with High Dynamic Range for Mismatch-Robust and Efficient Neurocomputing, in IEEE International Memory Workshop (IMW), Germany, May 2020.

• Shubham Sahay, et. al., OxRAM RNG circuits exploiting multiple undesirable nanoscale phenomena, IEEE Transactions on Nanotechnology, vol. 16, no. 4, pp. 560-566, July 2017.(Appeared in the list of most popular papers in the month of January (amongst Top 4) 2017)

• Post-doctoral Research Scholar, University of California, Santa Barbara, USA (2018-2020)

• Editor of IETE Technical Review.

• Member, IEEE

• Vice-chair, IEEE EDS, UP Section

• Appeared in the list of golden reviewers for IEEE Transactions on Electron Devices (TED) in 2017-2020.

• Recipient of I.I.T. (B.H.U.), Varanasi Gold Medal for standing First at the B.Tech. in Electronics Engineering Examination, 2014.

• Recipient of Late Prof. Nagesh Chandra Vaidya Gold Medal for standing First at the B.Tech. in Electronics Engineering Examination, 2014.

• Recipient of Dr. (Late) Nandita Saha Roy Memorial Gold Medal for securing First position in B.Tech. Electronics Engineering Examination, 2014.

• Recipient of C. Raja Gopal Memorial Gold Medal for securing highest marks (institute highest SGPA of 9.92 in absolute scale) in B.Tech. 4-Year Electronics Engineering Examination, 2014.

• Recipient of Dr. Ayyagari Sambasiva Rao Prize for standing First at the B.Tech. in Electronics Engineering Examination, 2014.

• Recipient of Late Prof. Manoranjan Sengupta Platinum Jubilee Merit Award for securing highest marks in B.Tech. in Electronics Engineering Examination, 2014.

Office

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Indian Institute of Technology
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Office Phone: 0512-259-2148 (O)

Fax: +91-512-2590063

Email: ssahay[AT]iitk.ac.in