VLSI design will soon use transistors whose size will be as small as 10nm. The aim of this workshop is to educate and train bright minds on different aspects of Nano-transistors. Modeling especially compact modeling is heart of circuit simulation. TCAD simulations are used for early device design and to understand the internal physics of transistor. Electrical characterization includes current and capacitance voltage measurement of transistor. RF measurement is an exciting area which involves understanding of devices as well as high frequency effects.
This short course will cover various topics in modeling, simulation and characterization of transistors especially at nanoscale.


Although registration is closed for NANO-Transistors course, you may register for upcoming courses by clicking "VLSI course" link below.
(1) VLSI Circuit Design in Semiconductor Industry (7-9 Mar. 2016),
(2) RF Modeling and Characterization of Si MOSFETs and GaN HEMTs for Microwave applications (July 2016)

• The updated program is available on this link (click here).

• Faculty members
• Practising engineers
• Students