Participants are required to register themselves through the GIAN portal.
Step1
APPLY HEREOne time registration fee for GIAN : ₹ 500
Step2
Once registered, search for the High Frequency Device Characterization and Modeling for THz applications course and register for it.Step3
Registration fee for the course
Participants from abroad: US $500/- Faculty: ₹ 3,000/- Industry/R&D Labs: ₹ 10,000/- Students: ₹ 1,000/-
NOTE: The above fee includes all instructional materials, computer use for tutorials and assignments, laboratory equipment usage charge. Accommodation will be provided on a payment basis. Please let us know a week prior to your arrival in case you need accommodation.
Participants can also pay the registration fee online. The account details are:
Name of the Beneficiary: Nano Transistor Short Course
Bank Account Number: 36065869752
Nature of Bank Account: SAVINGS
Name of the Bank: SBI, IIT Kanpur
Name & Address of Bank Branch (with pin code): SBI, IIT Kanpur - 208016
IFS Code (national transactions): SBIN0001161
The completed transaction details should be mailed as a screenshot to dangi@iitk.ac.in. Please indicate your name and current affiliations in the e-mail.
- Confirmed Registrations 4
- Anindya Bose, Indian Institute of Information Technology, Allahabad
- Dominic Mathew.A, Karunya University, Coimbatore
- R.Ragland Samuvel, Karunya University, Coimbatore
- Ankita Deo, Indira Gandhi Delhi Technical University for Women, Delhi
- Meena Panchore, IIITDM, Jabalpur
- Kanchan Cecil, IIITDM, Jabalpur
- Shivam Saxena, Jiwaji University, Gwalior
- Dinesh Kushwaha, SGSITS Indore
- Priyanka Bhalse, SGSITS Indore
- Krati Laad, SGSITS Indore
- Shivendra Singh, SGSITS Indore
- Sourabh Jindal, IIT Roorkee
- Abhishek Sahu, IIT Jodhpur
- Afaq Ahmed, ZHCET AMU
- Mandar Bhoir, IIT Gandhinagar
- Abhishek Upadhyay, NIEC New Delhi
- Ashutosh Srivastava, IIT(ISM) Dhanbad
- Barsha Jain, ABV-IIITM Gwalior
- Aditya Mishra, Badaun, UP
- Ahmad Khusro, JMI Delhi
- Prakash Chaurasia, NIT Agartala
- Deepak Kumar Panda, NIT Silchar
- Ahtisham Ul Haq, IIT Kanpur
- Amol Gaidhane, IIT Kanpur
- Raghvendra Dangi, IIT Kanpur
- Ravi Goel, IIT Kanpur
- Sudip Ghosh, IIT Kanpur
- Achintya Priydarshi, IIT Kanpur
- Shalini Tomar, IIT Kanpur
The course fee does NOT include accommodation. Participants will have to book their accommodation in advance for a nominal charge as applicable. For details on accommodation, kindly contact Mr. Achintya: +919532868523 Mr. Mukesh: +919044288324
Topics
This course will cover variety of topics related to THz devices such as – Introduction to THz Electronics and applications, Measurement challenges at high frequencies, calibration and de-embedding techniques, High frequency/speed devices – MOSFET, Diode and HBTs, Circuit design in THz regime and device modeling, Parameter extraction procedure, Electro-thermal effects and their characterization with pulse, DC, AC and RF measurements, Next generation THz devices: Graphene and 2D-devices, Opportunities, challenges and solutions in THz devices and circuits. Course participants will learn these topics through lectures and hands-on experiments. Also case studies and assignments will be shared to stimulate research motivation of participants.
Agenda
Sessions will commence at 2:30 PM and conclude at 5:30 PM for the entirety of the workshop.
- Introduction to THz Electronics and Applications
- Bipolar Basics
- Second Order Effects
- Frequency Behavior
- Technology: Basics and Advanced
- Fundamental Model Equation: The GICCR
- Where are the parameters?
- Equivalent Circuit
- Transfer Current - How to get the parameters?
- Optimization methods
- Capacitances & Transfer current & Base current & Resistances & Transit time - Results
- Calibration: Basics
- De-Embedding: Test Structures and Parasitics Determination
- On-Wafer Calibration
- Improved on Wafer Calibration
- Nodal Approach
- Solving the Heat Equation with the Quadrupole Approach
- Physics Based Electro-thermal Model And Equivalent Network
- Electro-thermal Characterization: Pulsed and AC
- TCAD Modelling With Emphasis on BEOL
- Thermal Coupling
- Compact Modelling of InP HBT with HiCuM
- Results of Storage Accelerated Aging Test
- Physical Investigation of Aging Mechanisms
- Extension of the HiCuM Model
- Results on a Circuit Level
- Roadmap of Semiconductor Industry
- New Material for replacing Silicon: Graphene? And the Graphene Hype
- Graphene Fabrication Techniques
- The Graphene Transistors
- Graphene Based Circuits
- Applications
- 2D-electronics
- An Electronics Engineer Or Research Scientist Interested In Semiconductor Devices, High Frequency Or RF/THz Electronics.
- A Practicing Engineer Working In The Field Of RF Device Modeling, Measurements, Parameter Extraction Or Circuit Design.
- An Executive, Engineer Or Researcher From Manufacturing, Service And Government Organizations Including R&D Laboratories.
- A Student Or Faculty From Academic Institution Interested In Learning How To Do Research In The Broad Area Of High Frequency Electronics.
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| Prof. Thomas Zimmer Professor IMS-BORDEAUX |
Dr. Yogesh Singh Chauhan Associate Professor IIT-Kanpur |
Dr. M. Jaleel Akhtar Associate Professor IIT-Kanpur |
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| Dr. Abhisek Dixit Associate Professor IIT-Delhi |
Dr. Trupti Ranjan Lenka Assistant Professor NIT Silchar |
Dr. Aditya Sankar Medury Assistant Professor IISER-Bhopal |
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| Dr. Nihar Ranjan Mohapatra Associate Professor IIT-Gandhinagar |
Dr. Jawar Singh Associate Professor IIIT-Jabalpur |
Mr. H.S.Jattana Group Head SCL |
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| Dr. Yogesh Singh Chauhan Associate Professor IIT-Kanpur |
Dr. Sitangshu Bhattacharya Assistant Professor IIIT-Allahabad |
Prof. Thomas Zimmer Professor IMS-BORDEAUX |
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| Dr. Santosh Kumar Vishvakarma Associate Professor IIT-Indore |
Mr Mohit Khanna R&D Operating Manager Keysight Technologies |
Dr. Swaroop Ganguly Associate Professor IIT Bombay |
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| Dr. Saurabh Lodha Associate Professor IIT-Bombay |
Dr. Udayan Ganguly Associate Professor IIT-Bombay |
Dr. Manoj Saxena Assistant Professor Delhi University |